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Infineon BSS806N H6327 MOSFET N-Ch 20V 2.3A SOT-23-3
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Infineon BSS806N H6327 MOSFET N-Ch 20V 2.3A SOT-23-3

BSS806N H6327
£0.38
In stock
1
Product Details

echnology: Si

Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 2.3 A
Rds On - Drain-Source Resistance: 41 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 550 mV
Qg - Gate Charge: 1.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 mW
Channel Mode: Enhancement
Qualification: AEC-Q101
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